1.
Opt Lett
; 35(7): 971-3, 2010 Apr 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-20364187
RESUMO
Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be pn junction diodes by the laser beam induced current characterization as well as the conductivity measurement. Transmission and photoluminescence spectral measurements on a n-type dominated hole-array structure give rise to different results from those of an ion-milled sample.